PART |
Description |
Maker |
U30FWJ2C53M |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Low Forward Voltage Schottky Barrier Type Switching Mode Power Supply Application Converter&Chopper Application
|
TOSHIBA
|
SBLF10L25 SBL10L25 SBLB10L25 |
Low VF Schottky Barrier Rectifier Reverse Voltage 25V Forward Current 10A Low VF Schottky Barrier Rectifier VF肖特基整流器
|
VISAY[Vishay Siliconix] Vishay Intertechnology, Inc.
|
MA4E2501L-1290W MA4E2501-1290 MA4E2501L-1290 MA4E2 |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
1PS66SB63 1PS79SB63 |
5 V, 20 mA low C_d Schottky barrier diodes 5 V, 20 mA low Cd Schottky barrier diodes SILICON, MIXER DIODE From old datasheet system
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管(低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装) RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
1PS79SB17 1PS66SB17 1PS76SB17 B17 |
1PS76SB17; 1PS79SB17; 4 V, 30 mA low C_d Schottky barrier diode 4 V, 30 MA LOW CD SCHOTTKY BARRIER DIODE
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
KDR367 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
ASI5082-2794 5082-2794 |
SCHOTTKY LOW BARRIER DIODE SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
BAT15-099R BAT1599R Q62702-A0043 |
RES CHIP 1K QW 5% SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
NSR01F30NXT5G10 NSR01F30 |
30 V, 100 mA, Low Vf Schottky, DSN2 (0201) Schottky Barrier Diode
|
ON Semiconductor
|